The H616 SoC family has support for several types of DRAM: DDR3,
LPDDR3, DDR4 and LPDDR4.
At the moment, the driver only supports DDR3 and LPDDR3 memory.
Let's extend the driver to support the LPDDR4 memory. This type
of memory widely used in device with T507(-H) SoC and new orangepi
zero3 with H618.
The compatibility with T507 is not yet complete, because there
is difference in the phy_init array.
The LPDDR4-2133 timings correspond to DRAM Rayson RS1G32LO4D2BDS-53BT
found on the NOR SPI from the Orangepi Zero 3 4GB.
Signed-off-by: Mikhail Kalashnikov <iuncuim@gmail.com>
Tested-by: Piotr Oniszczuk <piotr.oniszczuk@gmail.com>
Reviewed-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Acked-by: Andre Przywara <andre.przywara@arm.com>
The original H616 DDR3 ODT configuration code wrote board specific values
into a sequence of paired registers.
For LPDDR3 support we needed to special-case one group of registers,
because for that DRAM type we need to write 0 into the lower register of
each pair. That already made the code less readable.
LPDDR4 support will make things even messier, so let's refactor that
code now: We allow to write different values into the lower and upper
half of each pair. The masking is moved into a macro, and use in each
write statement.
The effect is not as obvious yet, as we don't need the full flexibility at
the moment, but the motivation will become clearer with LPDDR4 support.
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Reviewed-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Mikhail Kalashnikov <iuncuim@gmail.com>
The H616 SoC has support for several types of DRAM: DDR3, LPDDR3,
DDR4 and LPDDR4.
At the moment, the driver only supports DDR3 memory.
Let's extend the driver to support the LPDDR3 memory. All "magic"
values obtained from the boot0.
Signed-off-by: Mikhail Kalashnikov <iuncuim@gmail.com>
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Currently there is one DRAM parameter struct for the Allwinner H616 DRAM
"driver". It contains many fields that are compile time constants
(set by Kconfig variables), though there are also some fields that are
probed and changed over the runtime of the DRAM initialisation.
Because of this mixture, the compiler cannot properly optimise the code
for size, as it does not consider constant propagation in its full
potential.
Help the compiler out by splitting that structure into two: one that only
contains values known at compile time, and another one where the values
will actually change. The former can then be declared "const", which will
let the compiler fold its values directly into the code using it.
We also add "const" tags for some new "struct dram_config" pointers, to
further increase code optimisation.
To help the compiler optimise the code further, the definition of the
now "const struct dram_para" has to happen at a file-global level, so
move that part out of sunxi_dram_init().
That results in quite some code savings (almost 2KB), and helps to keep
the code small with the LPDDR3 support added later.
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Reviewed-by: Jernej Skrabec <jernej.skrabec@gmail.com>
There are quite some functions in the Allwinner H616 DRAM "driver", some
of them actually change the parameters in the structure passed to them,
but many are actually not.
To increase the optimisation potential for the code, mark those functions
that just read members of the passed dram_para struct as "const".
This in itself does not decrease the code size, but lays the groundwork
for future changes doing so.
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Reviewed-by: Jernej Skrabec <jernej.skrabec@gmail.com>
The usage of the C keyword "inline" seems to be a common
misunderstanding: it's a *hint* only, and modern compilers will inline
(or not) functions based on their own judgement and provided compiler
options.
So while marking functions as "inline" does not do much, missing the
"static" keyword will force to compiler to spell out a version of the
function for potential external callers, which actually increases the
code size (though hopefully the linker will drop the function).
Change the "inline" attribute for the mbus_configure_port() functions in
some Allwinner DRAM drivers to "static", so that the explicit version
can actually be dropped from the object file, reducing the code size.
"static inline" has a use case in header files, where it avoids a warning
if a .c file including this header does not use the particular function.
In a .c file itself "static inline" is not useful otherwise, so just use
static here as well.
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Reviewed-by: Jernej Skrabec <jernej.skrabec@gmail.com>
It turns out that some H616 and related SoCs (like H313) need TPR2
parameter for proper working. Add it.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Part of the code, previously known as "unknown feature", also doesn't
have constant values. They are derived from TPR0 parameter in vendor
DRAM code.
Let's move that code to separate function and introduce TPR0 parameter
here too, to ease adding new boards.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
These values are highly board specific and thus make sense to add
parameter for them. To ease adding support for new boards, let's make
them same as in vendor DRAM settings.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Mentioned function result is always true and result isn't checked
anyway. Let's make it void.
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Vendor H616 DRAM code always configure part which we call ODT
configuration. Let's reflect that here too.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Vendor DRAM settings use TPR10 parameter to enable various features.
There are many mores features that just those that are currently
mentioned. Since new will be added later and most are not known, let's
reuse value from vendor DRAM driver as-is. This will also help adding
support for new boards.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
While ODT values for same memory type are similar, they are not
necessary the same. Let's parameterize them and make parameter same as
in vendor DRAM settings. That way it will be easy to introduce new board
support.
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Fix code style for pointer declaration. This is just cosmetic change to
avoid checkpatch errors in later commits.
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Vendor DRAM code actually writes to whole CR register and not just sets
bit 31 in mctl_ctrl_init().
Just to be safe, do that here too.
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
H6 and H616 SPL code has a few writes to unknown PRCM registers. Now
that we know what they are, let's replace magic offsets with proper
register names.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Samuel Holland <samuel@sholland.org>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Although it isn't known what bit 0 in PHY reg 8 does, it's obvious that
it has to be set before read calibration and cleared afterwards. This is
already done for first rank, but not for second (copy & paste error.)
Fix it.
Fixes: f4317dbd06 ("sunxi: Add H616 DRAM support")
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Kconfig symbol is missing CONFIG_ prefix, so compiler will always
skip ODT configuration.
Fix symbol name.
Fixes: f4317dbd06 ("sunxi: Add H616 DRAM support")
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Most clock factors and dividers in the H6 PLLs use a "+1 encoding",
which we were missing on two occasions.
This fixes the MMC clock setup on the H6, which could be slightly off due
to the wrong parent frequency:
mmc 2 set mod-clk req 52000000 parent 1176000000 n 2 m 12 rate 49000000
Also the CPU frequency (PLL1) was a tad too high before.
For PLL5 (DRAM) we already accounted for this +1, but in the DRAM code
itself, not in the bit field macro. Move this there to be aligned with
what the other SoCs and other PLLs do.
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
Reviewed-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Allwinner H616 supports many types of DRAM. Most notably it supports
LPDDR4. However, all commercially available boards at this time use
only DDR3, so this commit adds only DDR3 support.
Controller and MBUS are very similar to H6 but PHY is completely
unknown.
Signed-off-by: Jernej Skrabec <jernej.skrabec@siol.net>
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
