sunxi: Parameterize "unknown feature" in H616 DRAM driver

Part of the code, previously known as "unknown feature", also doesn't
have constant values. They are derived from TPR0 parameter in vendor
DRAM code.

Let's move that code to separate function and introduce TPR0 parameter
here too, to ease adding new boards.

Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
This commit is contained in:
Jernej Skrabec 2023-04-10 10:21:17 +02:00 committed by Andre Przywara
parent ae6f66d5b5
commit b3cb03cf79
4 changed files with 44 additions and 11 deletions

View file

@ -156,6 +156,7 @@ struct dram_para {
u32 dx_dri;
u32 ca_dri;
u32 odt_en;
u32 tpr0;
u32 tpr10;
u32 tpr11;
u32 tpr12;

View file

@ -73,6 +73,12 @@ config DRAM_SUN50I_H616_ODT_EN
help
ODT EN value from vendor DRAM settings.
config DRAM_SUN50I_H616_TPR0
hex "H616 DRAM TPR0 parameter"
default 0x0
help
TPR0 value from vendor DRAM settings.
config DRAM_SUN50I_H616_TPR10
hex "H616 DRAM TPR10 parameter"
help

View file

@ -773,6 +773,39 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para)
}
}
static void mctl_phy_ca_bit_delay_compensation(struct dram_para *para)
{
u32 val, *ptr;
int i;
if (para->tpr0 & BIT(30))
val = (para->tpr0 >> 7) & 0x3e;
else
val = (para->tpr10 >> 3) & 0x1e;
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x780);
for (i = 0; i < 32; i++)
writel(val, &ptr[i]);
val = (para->tpr10 << 1) & 0x1e;
writel(val, SUNXI_DRAM_PHY0_BASE + 0x7dc);
writel(val, SUNXI_DRAM_PHY0_BASE + 0x7e0);
/* following configuration is DDR3 specific */
val = (para->tpr10 >> 7) & 0x1e;
writel(val, SUNXI_DRAM_PHY0_BASE + 0x7d4);
if (para->ranks == 2) {
val = (para->tpr10 >> 11) & 0x1e;
writel(val, SUNXI_DRAM_PHY0_BASE + 0x79c);
}
if (para->tpr0 & BIT(31)) {
val = (para->tpr0 << 1) & 0x3e;
writel(val, SUNXI_DRAM_PHY0_BASE + 0x78c);
writel(val, SUNXI_DRAM_PHY0_BASE + 0x7a4);
writel(val, SUNXI_DRAM_PHY0_BASE + 0x7b8);
}
}
static bool mctl_phy_init(struct dram_para *para)
{
struct sunxi_mctl_com_reg * const mctl_com =
@ -807,17 +840,8 @@ static bool mctl_phy_init(struct dram_para *para)
for (i = 0; i < ARRAY_SIZE(phy_init); i++)
writel(phy_init[i], &ptr[i]);
if (para->tpr10 & TPR10_CA_BIT_DELAY) {
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x780);
for (i = 0; i < 32; i++)
writel(0x16, &ptr[i]);
writel(0xe, SUNXI_DRAM_PHY0_BASE + 0x78c);
writel(0xe, SUNXI_DRAM_PHY0_BASE + 0x7a4);
writel(0xe, SUNXI_DRAM_PHY0_BASE + 0x7b8);
writel(0x8, SUNXI_DRAM_PHY0_BASE + 0x7d4);
writel(0xe, SUNXI_DRAM_PHY0_BASE + 0x7dc);
writel(0xe, SUNXI_DRAM_PHY0_BASE + 0x7e0);
}
if (para->tpr10 & TPR10_CA_BIT_DELAY)
mctl_phy_ca_bit_delay_compensation(para);
writel(0x80, SUNXI_DRAM_PHY0_BASE + 0x3dc);
writel(0x80, SUNXI_DRAM_PHY0_BASE + 0x45c);
@ -1110,6 +1134,7 @@ unsigned long sunxi_dram_init(void)
.dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
.ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
.odt_en = CONFIG_DRAM_SUN50I_H616_ODT_EN,
.tpr0 = CONFIG_DRAM_SUN50I_H616_TPR0,
.tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,
.tpr11 = CONFIG_DRAM_SUN50I_H616_TPR11,
.tpr12 = CONFIG_DRAM_SUN50I_H616_TPR12,

View file

@ -6,6 +6,7 @@ CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
CONFIG_DRAM_SUN50I_H616_DX_ODT=0x03030303
CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e
CONFIG_DRAM_SUN50I_H616_CA_DRI=0x1c12
CONFIG_DRAM_SUN50I_H616_TPR0=0xc0000c05
CONFIG_DRAM_SUN50I_H616_TPR10=0x2f0007
CONFIG_DRAM_SUN50I_H616_TPR11=0xffffdddd
CONFIG_DRAM_SUN50I_H616_TPR12=0xfedf7557