mirror of
https://github.com/AsahiLinux/u-boot
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0cf207ec01
Signed-off-by: Wolfgang Denk <wd@denx.de>
738 lines
22 KiB
C
738 lines
22 KiB
C
// SPDX-License-Identifier: GPL-2.0+
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/*
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* sunxi DRAM controller initialization
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* (C) Copyright 2012 Henrik Nordstrom <henrik@henriknordstrom.net>
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* (C) Copyright 2013 Luke Kenneth Casson Leighton <lkcl@lkcl.net>
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*
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* Based on sun4i Linux kernel sources mach-sunxi/pm/standby/dram*.c
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* and earlier U-Boot Allwinner A10 SPL work
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*
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* (C) Copyright 2007-2012
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* Allwinner Technology Co., Ltd. <www.allwinnertech.com>
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* Berg Xing <bergxing@allwinnertech.com>
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* Tom Cubie <tangliang@allwinnertech.com>
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*/
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/*
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* Unfortunately the only documentation we have on the sun7i DRAM
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* controller is Allwinner boot0 + boot1 code, and that code uses
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* magic numbers & shifts with no explanations. Hence this code is
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* rather undocumented and full of magic.
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*/
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#include <common.h>
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#include <init.h>
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#include <asm/io.h>
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#include <asm/arch/clock.h>
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#include <asm/arch/dram.h>
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#include <asm/arch/timer.h>
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#include <asm/arch/sys_proto.h>
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#include <linux/delay.h>
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#define CPU_CFG_CHIP_VER(n) ((n) << 6)
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#define CPU_CFG_CHIP_VER_MASK CPU_CFG_CHIP_VER(0x3)
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#define CPU_CFG_CHIP_REV_A 0x0
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#define CPU_CFG_CHIP_REV_C1 0x1
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#define CPU_CFG_CHIP_REV_C2 0x2
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#define CPU_CFG_CHIP_REV_B 0x3
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/*
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* Wait up to 1s for mask to be clear in given reg.
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*/
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static inline void await_bits_clear(u32 *reg, u32 mask)
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{
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mctl_await_completion(reg, mask, 0);
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}
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/*
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* Wait up to 1s for mask to be set in given reg.
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*/
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static inline void await_bits_set(u32 *reg, u32 mask)
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{
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mctl_await_completion(reg, mask, mask);
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}
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/*
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* This performs the external DRAM reset by driving the RESET pin low and
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* then high again. According to the DDR3 spec, the RESET pin needs to be
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* kept low for at least 200 us.
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*/
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static void mctl_ddr3_reset(void)
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{
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struct sunxi_dram_reg *dram =
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(struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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#ifdef CONFIG_MACH_SUN4I
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struct sunxi_timer_reg *timer =
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(struct sunxi_timer_reg *)SUNXI_TIMER_BASE;
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u32 reg_val;
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writel(0, &timer->cpu_cfg);
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reg_val = readl(&timer->cpu_cfg);
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if ((reg_val & CPU_CFG_CHIP_VER_MASK) !=
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CPU_CFG_CHIP_VER(CPU_CFG_CHIP_REV_A)) {
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setbits_le32(&dram->mcr, DRAM_MCR_RESET);
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udelay(200);
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clrbits_le32(&dram->mcr, DRAM_MCR_RESET);
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} else
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#endif
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{
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clrbits_le32(&dram->mcr, DRAM_MCR_RESET);
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udelay(200);
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setbits_le32(&dram->mcr, DRAM_MCR_RESET);
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}
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/* After the RESET pin is de-asserted, the DDR3 spec requires to wait
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* for additional 500 us before driving the CKE pin (Clock Enable)
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* high. The duration of this delay can be configured in the SDR_IDCR
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* (Initialization Delay Configuration Register) and applied
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* automatically by the DRAM controller during the DDR3 initialization
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* step. But SDR_IDCR has limited range on sun4i/sun5i hardware and
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* can't provide sufficient delay at DRAM clock frequencies higher than
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* 524 MHz (while Allwinner A13 supports DRAM clock frequency up to
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* 533 MHz according to the datasheet). Additionally, there is no
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* official documentation for the SDR_IDCR register anywhere, and
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* there is always a chance that we are interpreting it wrong.
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* Better be safe than sorry, so add an explicit delay here. */
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udelay(500);
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}
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static void mctl_set_drive(void)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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#ifdef CONFIG_MACH_SUN7I
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clrsetbits_le32(&dram->mcr, DRAM_MCR_MODE_NORM(0x3) | (0x3 << 28),
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#else
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clrsetbits_le32(&dram->mcr, DRAM_MCR_MODE_NORM(0x3),
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#endif
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DRAM_MCR_MODE_EN(0x3) |
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0xffc);
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}
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static void mctl_itm_disable(void)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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clrsetbits_le32(&dram->ccr, DRAM_CCR_INIT, DRAM_CCR_ITM_OFF);
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}
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static void mctl_itm_enable(void)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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clrbits_le32(&dram->ccr, DRAM_CCR_ITM_OFF);
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}
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static void mctl_itm_reset(void)
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{
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mctl_itm_disable();
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udelay(1); /* ITM reset needs a bit of delay */
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mctl_itm_enable();
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udelay(1);
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}
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static void mctl_enable_dll0(u32 phase)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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clrsetbits_le32(&dram->dllcr[0], 0x3f << 6,
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((phase >> 16) & 0x3f) << 6);
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clrsetbits_le32(&dram->dllcr[0], DRAM_DLLCR_NRESET, DRAM_DLLCR_DISABLE);
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udelay(2);
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clrbits_le32(&dram->dllcr[0], DRAM_DLLCR_NRESET | DRAM_DLLCR_DISABLE);
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udelay(22);
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clrsetbits_le32(&dram->dllcr[0], DRAM_DLLCR_DISABLE, DRAM_DLLCR_NRESET);
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udelay(22);
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}
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/* Get the number of DDR byte lanes */
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static u32 mctl_get_number_of_lanes(void)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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if ((readl(&dram->dcr) & DRAM_DCR_BUS_WIDTH_MASK) ==
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DRAM_DCR_BUS_WIDTH(DRAM_DCR_BUS_WIDTH_32BIT))
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return 4;
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else
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return 2;
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}
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/*
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* Note: This differs from pm/standby in that it checks the bus width
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*/
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static void mctl_enable_dllx(u32 phase)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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u32 i, number_of_lanes;
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number_of_lanes = mctl_get_number_of_lanes();
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for (i = 1; i <= number_of_lanes; i++) {
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clrsetbits_le32(&dram->dllcr[i], 0xf << 14,
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(phase & 0xf) << 14);
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clrsetbits_le32(&dram->dllcr[i], DRAM_DLLCR_NRESET,
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DRAM_DLLCR_DISABLE);
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phase >>= 4;
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}
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udelay(2);
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for (i = 1; i <= number_of_lanes; i++)
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clrbits_le32(&dram->dllcr[i], DRAM_DLLCR_NRESET |
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DRAM_DLLCR_DISABLE);
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udelay(22);
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for (i = 1; i <= number_of_lanes; i++)
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clrsetbits_le32(&dram->dllcr[i], DRAM_DLLCR_DISABLE,
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DRAM_DLLCR_NRESET);
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udelay(22);
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}
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static u32 hpcr_value[32] = {
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#ifdef CONFIG_MACH_SUN5I
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0, 0, 0, 0,
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0, 0, 0, 0,
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0, 0, 0, 0,
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0, 0, 0, 0,
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0x1031, 0x1031, 0x0735, 0x1035,
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0x1035, 0x0731, 0x1031, 0,
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0x0301, 0x0301, 0x0301, 0x0301,
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0x0301, 0x0301, 0x0301, 0
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#endif
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#ifdef CONFIG_MACH_SUN4I
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0x0301, 0x0301, 0x0301, 0x0301,
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0x0301, 0x0301, 0, 0,
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0, 0, 0, 0,
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0, 0, 0, 0,
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0x1031, 0x1031, 0x0735, 0x5031,
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0x1035, 0x0731, 0x1031, 0x0735,
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0x1035, 0x1031, 0x0731, 0x1035,
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0x1031, 0x0301, 0x0301, 0x0731
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#endif
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#ifdef CONFIG_MACH_SUN7I
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0x0301, 0x0301, 0x0301, 0x0301,
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0x0301, 0x0301, 0x0301, 0x0301,
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0, 0, 0, 0,
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0, 0, 0, 0,
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0x1031, 0x1031, 0x0735, 0x1035,
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0x1035, 0x0731, 0x1031, 0x0735,
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0x1035, 0x1031, 0x0731, 0x1035,
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0x0001, 0x1031, 0, 0x1031
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/* last row differs from boot0 source table
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* 0x1031, 0x0301, 0x0301, 0x0731
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* but boot0 code skips #28 and #30, and sets #29 and #31 to the
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* value from #28 entry (0x1031)
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*/
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#endif
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};
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static void mctl_configure_hostport(void)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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u32 i;
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for (i = 0; i < 32; i++)
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writel(hpcr_value[i], &dram->hpcr[i]);
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}
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static void mctl_setup_dram_clock(u32 clk, u32 mbus_clk)
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{
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u32 reg_val;
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struct sunxi_ccm_reg *ccm = (struct sunxi_ccm_reg *)SUNXI_CCM_BASE;
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u32 pll5p_clk, pll6x_clk;
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u32 pll5p_div, pll6x_div;
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u32 pll5p_rate, pll6x_rate;
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/* setup DRAM PLL */
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reg_val = readl(&ccm->pll5_cfg);
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reg_val &= ~CCM_PLL5_CTRL_M_MASK; /* set M to 0 (x1) */
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reg_val &= ~CCM_PLL5_CTRL_K_MASK; /* set K to 0 (x1) */
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reg_val &= ~CCM_PLL5_CTRL_N_MASK; /* set N to 0 (x0) */
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reg_val &= ~CCM_PLL5_CTRL_P_MASK; /* set P to 0 (x1) */
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#ifdef CONFIG_OLD_SUNXI_KERNEL_COMPAT
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/* Old kernels are hardcoded to P=1 (divide by 2) */
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reg_val |= CCM_PLL5_CTRL_P(1);
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#endif
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if (clk >= 540 && clk < 552) {
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/* dram = 540MHz */
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reg_val |= CCM_PLL5_CTRL_M(CCM_PLL5_CTRL_M_X(2));
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reg_val |= CCM_PLL5_CTRL_K(CCM_PLL5_CTRL_K_X(3));
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reg_val |= CCM_PLL5_CTRL_N(CCM_PLL5_CTRL_N_X(15));
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} else if (clk >= 512 && clk < 528) {
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/* dram = 512MHz */
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reg_val |= CCM_PLL5_CTRL_M(CCM_PLL5_CTRL_M_X(3));
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reg_val |= CCM_PLL5_CTRL_K(CCM_PLL5_CTRL_K_X(4));
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reg_val |= CCM_PLL5_CTRL_N(CCM_PLL5_CTRL_N_X(16));
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} else if (clk >= 496 && clk < 504) {
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/* dram = 496MHz */
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reg_val |= CCM_PLL5_CTRL_M(CCM_PLL5_CTRL_M_X(3));
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reg_val |= CCM_PLL5_CTRL_K(CCM_PLL5_CTRL_K_X(2));
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reg_val |= CCM_PLL5_CTRL_N(CCM_PLL5_CTRL_N_X(31));
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} else if (clk >= 468 && clk < 480) {
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/* dram = 468MHz */
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reg_val |= CCM_PLL5_CTRL_M(CCM_PLL5_CTRL_M_X(2));
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reg_val |= CCM_PLL5_CTRL_K(CCM_PLL5_CTRL_K_X(3));
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reg_val |= CCM_PLL5_CTRL_N(CCM_PLL5_CTRL_N_X(13));
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} else if (clk >= 396 && clk < 408) {
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/* dram = 396MHz */
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reg_val |= CCM_PLL5_CTRL_M(CCM_PLL5_CTRL_M_X(2));
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reg_val |= CCM_PLL5_CTRL_K(CCM_PLL5_CTRL_K_X(3));
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reg_val |= CCM_PLL5_CTRL_N(CCM_PLL5_CTRL_N_X(11));
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} else {
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/* any other frequency that is a multiple of 24 */
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reg_val |= CCM_PLL5_CTRL_M(CCM_PLL5_CTRL_M_X(2));
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reg_val |= CCM_PLL5_CTRL_K(CCM_PLL5_CTRL_K_X(2));
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reg_val |= CCM_PLL5_CTRL_N(CCM_PLL5_CTRL_N_X(clk / 24));
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}
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reg_val &= ~CCM_PLL5_CTRL_VCO_GAIN; /* PLL VCO Gain off */
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reg_val |= CCM_PLL5_CTRL_EN; /* PLL On */
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writel(reg_val, &ccm->pll5_cfg);
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udelay(5500);
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setbits_le32(&ccm->pll5_cfg, CCM_PLL5_CTRL_DDR_CLK);
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#if defined(CONFIG_MACH_SUN4I) || defined(CONFIG_MACH_SUN7I)
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/* reset GPS */
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clrbits_le32(&ccm->gps_clk_cfg, CCM_GPS_CTRL_RESET | CCM_GPS_CTRL_GATE);
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setbits_le32(&ccm->ahb_gate0, CCM_AHB_GATE_GPS);
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udelay(1);
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clrbits_le32(&ccm->ahb_gate0, CCM_AHB_GATE_GPS);
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#endif
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/* setup MBUS clock */
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if (!mbus_clk)
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mbus_clk = 300;
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/* PLL5P and PLL6 are the potential clock sources for MBUS */
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pll6x_clk = clock_get_pll6() / 1000000;
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#ifdef CONFIG_MACH_SUN7I
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pll6x_clk *= 2; /* sun7i uses PLL6*2, sun5i uses just PLL6 */
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#endif
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pll5p_clk = clock_get_pll5p() / 1000000;
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pll6x_div = DIV_ROUND_UP(pll6x_clk, mbus_clk);
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pll5p_div = DIV_ROUND_UP(pll5p_clk, mbus_clk);
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pll6x_rate = pll6x_clk / pll6x_div;
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pll5p_rate = pll5p_clk / pll5p_div;
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if (pll6x_div <= 16 && pll6x_rate > pll5p_rate) {
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/* use PLL6 as the MBUS clock source */
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reg_val = CCM_MBUS_CTRL_GATE |
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CCM_MBUS_CTRL_CLK_SRC(CCM_MBUS_CTRL_CLK_SRC_PLL6) |
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CCM_MBUS_CTRL_N(CCM_MBUS_CTRL_N_X(1)) |
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CCM_MBUS_CTRL_M(CCM_MBUS_CTRL_M_X(pll6x_div));
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} else if (pll5p_div <= 16) {
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/* use PLL5P as the MBUS clock source */
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reg_val = CCM_MBUS_CTRL_GATE |
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CCM_MBUS_CTRL_CLK_SRC(CCM_MBUS_CTRL_CLK_SRC_PLL5) |
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CCM_MBUS_CTRL_N(CCM_MBUS_CTRL_N_X(1)) |
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CCM_MBUS_CTRL_M(CCM_MBUS_CTRL_M_X(pll5p_div));
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} else {
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panic("Bad mbus_clk\n");
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}
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writel(reg_val, &ccm->mbus_clk_cfg);
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/*
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* open DRAMC AHB & DLL register clock
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* close it first
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*/
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#if defined(CONFIG_MACH_SUN5I) || defined(CONFIG_MACH_SUN7I)
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clrbits_le32(&ccm->ahb_gate0, CCM_AHB_GATE_SDRAM | CCM_AHB_GATE_DLL);
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#else
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clrbits_le32(&ccm->ahb_gate0, CCM_AHB_GATE_SDRAM);
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#endif
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udelay(22);
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/* then open it */
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#if defined(CONFIG_MACH_SUN5I) || defined(CONFIG_MACH_SUN7I)
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setbits_le32(&ccm->ahb_gate0, CCM_AHB_GATE_SDRAM | CCM_AHB_GATE_DLL);
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#else
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setbits_le32(&ccm->ahb_gate0, CCM_AHB_GATE_SDRAM);
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#endif
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udelay(22);
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}
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/*
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* The data from rslrX and rdgrX registers (X=rank) is stored
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* in a single 32-bit value using the following format:
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* bits [31:26] - DQS gating system latency for byte lane 3
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* bits [25:24] - DQS gating phase select for byte lane 3
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* bits [23:18] - DQS gating system latency for byte lane 2
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* bits [17:16] - DQS gating phase select for byte lane 2
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* bits [15:10] - DQS gating system latency for byte lane 1
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* bits [ 9:8 ] - DQS gating phase select for byte lane 1
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* bits [ 7:2 ] - DQS gating system latency for byte lane 0
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* bits [ 1:0 ] - DQS gating phase select for byte lane 0
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*/
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static void mctl_set_dqs_gating_delay(int rank, u32 dqs_gating_delay)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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u32 lane, number_of_lanes = mctl_get_number_of_lanes();
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/* rank0 gating system latency (3 bits per lane: cycles) */
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u32 slr = readl(rank == 0 ? &dram->rslr0 : &dram->rslr1);
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/* rank0 gating phase select (2 bits per lane: 90, 180, 270, 360) */
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u32 dgr = readl(rank == 0 ? &dram->rdgr0 : &dram->rdgr1);
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for (lane = 0; lane < number_of_lanes; lane++) {
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u32 tmp = dqs_gating_delay >> (lane * 8);
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slr &= ~(7 << (lane * 3));
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slr |= ((tmp >> 2) & 7) << (lane * 3);
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dgr &= ~(3 << (lane * 2));
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dgr |= (tmp & 3) << (lane * 2);
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}
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writel(slr, rank == 0 ? &dram->rslr0 : &dram->rslr1);
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writel(dgr, rank == 0 ? &dram->rdgr0 : &dram->rdgr1);
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}
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static int dramc_scan_readpipe(void)
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{
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struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
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u32 reg_val;
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/* data training trigger */
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clrbits_le32(&dram->csr, DRAM_CSR_FAILED);
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setbits_le32(&dram->ccr, DRAM_CCR_DATA_TRAINING);
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/* check whether data training process has completed */
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await_bits_clear(&dram->ccr, DRAM_CCR_DATA_TRAINING);
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/* check data training result */
|
|
reg_val = readl(&dram->csr);
|
|
if (reg_val & DRAM_CSR_FAILED)
|
|
return -1;
|
|
|
|
return 0;
|
|
}
|
|
|
|
static void dramc_clock_output_en(u32 on)
|
|
{
|
|
#if defined(CONFIG_MACH_SUN5I) || defined(CONFIG_MACH_SUN7I)
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
|
|
if (on)
|
|
setbits_le32(&dram->mcr, DRAM_MCR_DCLK_OUT);
|
|
else
|
|
clrbits_le32(&dram->mcr, DRAM_MCR_DCLK_OUT);
|
|
#endif
|
|
#ifdef CONFIG_MACH_SUN4I
|
|
struct sunxi_ccm_reg *ccm = (struct sunxi_ccm_reg *)SUNXI_CCM_BASE;
|
|
if (on)
|
|
setbits_le32(&ccm->dram_clk_gate, CCM_DRAM_CTRL_DCLK_OUT);
|
|
else
|
|
clrbits_le32(&ccm->dram_clk_gate, CCM_DRAM_CTRL_DCLK_OUT);
|
|
#endif
|
|
}
|
|
|
|
/* tRFC in nanoseconds for different densities (from the DDR3 spec) */
|
|
static const u16 tRFC_DDR3_table[6] = {
|
|
/* 256Mb 512Mb 1Gb 2Gb 4Gb 8Gb */
|
|
90, 90, 110, 160, 300, 350
|
|
};
|
|
|
|
static void dramc_set_autorefresh_cycle(u32 clk, u32 density)
|
|
{
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
u32 tRFC, tREFI;
|
|
|
|
tRFC = (tRFC_DDR3_table[density] * clk + 999) / 1000;
|
|
tREFI = (7987 * clk) >> 10; /* <= 7.8us */
|
|
|
|
writel(DRAM_DRR_TREFI(tREFI) | DRAM_DRR_TRFC(tRFC), &dram->drr);
|
|
}
|
|
|
|
/* Calculate the value for A11, A10, A9 bits in MR0 (write recovery) */
|
|
static u32 ddr3_write_recovery(u32 clk)
|
|
{
|
|
u32 twr_ns = 15; /* DDR3 spec says that it is 15ns for all speed bins */
|
|
u32 twr_ck = (twr_ns * clk + 999) / 1000;
|
|
if (twr_ck < 5)
|
|
return 1;
|
|
else if (twr_ck <= 8)
|
|
return twr_ck - 4;
|
|
else if (twr_ck <= 10)
|
|
return 5;
|
|
else
|
|
return 6;
|
|
}
|
|
|
|
/*
|
|
* If the dram->ppwrsctl (SDR_DPCR) register has the lowest bit set to 1, this
|
|
* means that DRAM is currently in self-refresh mode and retaining the old
|
|
* data. Since we have no idea what to do in this situation yet, just set this
|
|
* register to 0 and initialize DRAM in the same way as on any normal reboot
|
|
* (discarding whatever was stored there).
|
|
*
|
|
* Note: on sun7i hardware, the highest 16 bits need to be set to 0x1651 magic
|
|
* value for this write operation to have any effect. On sun5i hadware this
|
|
* magic value is not necessary. And on sun4i hardware the writes to this
|
|
* register seem to have no effect at all.
|
|
*/
|
|
static void mctl_disable_power_save(void)
|
|
{
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
writel(0x16510000, &dram->ppwrsctl);
|
|
}
|
|
|
|
/*
|
|
* After the DRAM is powered up or reset, the DDR3 spec requires to wait at
|
|
* least 500 us before driving the CKE pin (Clock Enable) high. The dram->idct
|
|
* (SDR_IDCR) register appears to configure this delay, which gets applied
|
|
* right at the time when the DRAM initialization is activated in the
|
|
* 'mctl_ddr3_initialize' function.
|
|
*/
|
|
static void mctl_set_cke_delay(void)
|
|
{
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
|
|
/* The CKE delay is represented in DRAM clock cycles, multiplied by N
|
|
* (where N=2 for sun4i/sun5i and N=3 for sun7i). Here it is set to
|
|
* the maximum possible value 0x1ffff, just like in the Allwinner's
|
|
* boot0 bootloader. The resulting delay value is somewhere between
|
|
* ~0.4 ms (sun5i with 648 MHz DRAM clock speed) and ~1.1 ms (sun7i
|
|
* with 360 MHz DRAM clock speed). */
|
|
setbits_le32(&dram->idcr, 0x1ffff);
|
|
}
|
|
|
|
/*
|
|
* This triggers the DRAM initialization. It performs sending the mode registers
|
|
* to the DRAM among other things. Very likely the ZQCL command is also getting
|
|
* executed (to do the initial impedance calibration on the DRAM side of the
|
|
* wire). The memory controller and the PHY must be already configured before
|
|
* calling this function.
|
|
*/
|
|
static void mctl_ddr3_initialize(void)
|
|
{
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
setbits_le32(&dram->ccr, DRAM_CCR_INIT);
|
|
await_bits_clear(&dram->ccr, DRAM_CCR_INIT);
|
|
}
|
|
|
|
/*
|
|
* Perform impedance calibration on the DRAM controller side of the wire.
|
|
*/
|
|
static void mctl_set_impedance(u32 zq, bool odt_en)
|
|
{
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
u32 reg_val;
|
|
u32 zprog = zq & 0xFF, zdata = (zq >> 8) & 0xFFFFF;
|
|
|
|
#ifndef CONFIG_MACH_SUN7I
|
|
/* Appears that some kind of automatically initiated default
|
|
* ZQ calibration is already in progress at this point on sun4i/sun5i
|
|
* hardware, but not on sun7i. So it is reasonable to wait for its
|
|
* completion before doing anything else. */
|
|
await_bits_set(&dram->zqsr, DRAM_ZQSR_ZDONE);
|
|
#endif
|
|
|
|
/* ZQ calibration is not really useful unless ODT is enabled */
|
|
if (!odt_en)
|
|
return;
|
|
|
|
#ifdef CONFIG_MACH_SUN7I
|
|
/* Enabling ODT in SDR_IOCR on sun7i hardware results in a deadlock
|
|
* unless bit 24 is set in SDR_ZQCR1. Not much is known about the
|
|
* SDR_ZQCR1 register, but there are hints indicating that it might
|
|
* be related to periodic impedance re-calibration. This particular
|
|
* magic value is borrowed from the Allwinner boot0 bootloader, and
|
|
* using it helps to avoid troubles */
|
|
writel((1 << 24) | (1 << 1), &dram->zqcr1);
|
|
#endif
|
|
|
|
/* Needed at least for sun5i, because it does not self clear there */
|
|
clrbits_le32(&dram->zqcr0, DRAM_ZQCR0_ZCAL);
|
|
|
|
if (zdata) {
|
|
/* Set the user supplied impedance data */
|
|
reg_val = DRAM_ZQCR0_ZDEN | zdata;
|
|
writel(reg_val, &dram->zqcr0);
|
|
/* no need to wait, this takes effect immediately */
|
|
} else {
|
|
/* Do the calibration using the external resistor */
|
|
reg_val = DRAM_ZQCR0_ZCAL | DRAM_ZQCR0_IMP_DIV(zprog);
|
|
writel(reg_val, &dram->zqcr0);
|
|
/* Wait for the new impedance configuration to settle */
|
|
await_bits_set(&dram->zqsr, DRAM_ZQSR_ZDONE);
|
|
}
|
|
|
|
/* Needed at least for sun5i, because it does not self clear there */
|
|
clrbits_le32(&dram->zqcr0, DRAM_ZQCR0_ZCAL);
|
|
|
|
/* Set I/O configure register */
|
|
writel(DRAM_IOCR_ODT_EN, &dram->iocr);
|
|
}
|
|
|
|
static unsigned long dramc_init_helper(struct dram_para *para)
|
|
{
|
|
struct sunxi_dram_reg *dram = (struct sunxi_dram_reg *)SUNXI_DRAMC_BASE;
|
|
u32 reg_val;
|
|
u32 density;
|
|
int ret_val;
|
|
|
|
/*
|
|
* only single rank DDR3 is supported by this code even though the
|
|
* hardware can theoretically support DDR2 and up to two ranks
|
|
*/
|
|
if (para->type != DRAM_MEMORY_TYPE_DDR3 || para->rank_num != 1)
|
|
return 0;
|
|
|
|
/* setup DRAM relative clock */
|
|
mctl_setup_dram_clock(para->clock, para->mbus_clock);
|
|
|
|
/* Disable any pad power save control */
|
|
mctl_disable_power_save();
|
|
|
|
mctl_set_drive();
|
|
|
|
/* dram clock off */
|
|
dramc_clock_output_en(0);
|
|
|
|
#ifdef CONFIG_MACH_SUN4I
|
|
/* select dram controller 1 */
|
|
writel(DRAM_CSEL_MAGIC, &dram->csel);
|
|
#endif
|
|
|
|
mctl_itm_disable();
|
|
mctl_enable_dll0(para->tpr3);
|
|
|
|
/* configure external DRAM */
|
|
reg_val = DRAM_DCR_TYPE_DDR3;
|
|
reg_val |= DRAM_DCR_IO_WIDTH(para->io_width >> 3);
|
|
|
|
if (para->density == 256)
|
|
density = DRAM_DCR_CHIP_DENSITY_256M;
|
|
else if (para->density == 512)
|
|
density = DRAM_DCR_CHIP_DENSITY_512M;
|
|
else if (para->density == 1024)
|
|
density = DRAM_DCR_CHIP_DENSITY_1024M;
|
|
else if (para->density == 2048)
|
|
density = DRAM_DCR_CHIP_DENSITY_2048M;
|
|
else if (para->density == 4096)
|
|
density = DRAM_DCR_CHIP_DENSITY_4096M;
|
|
else if (para->density == 8192)
|
|
density = DRAM_DCR_CHIP_DENSITY_8192M;
|
|
else
|
|
density = DRAM_DCR_CHIP_DENSITY_256M;
|
|
|
|
reg_val |= DRAM_DCR_CHIP_DENSITY(density);
|
|
reg_val |= DRAM_DCR_BUS_WIDTH((para->bus_width >> 3) - 1);
|
|
reg_val |= DRAM_DCR_RANK_SEL(para->rank_num - 1);
|
|
reg_val |= DRAM_DCR_CMD_RANK_ALL;
|
|
reg_val |= DRAM_DCR_MODE(DRAM_DCR_MODE_INTERLEAVE);
|
|
writel(reg_val, &dram->dcr);
|
|
|
|
dramc_clock_output_en(1);
|
|
|
|
mctl_set_impedance(para->zq, para->odt_en);
|
|
|
|
mctl_set_cke_delay();
|
|
|
|
mctl_ddr3_reset();
|
|
|
|
udelay(1);
|
|
|
|
await_bits_clear(&dram->ccr, DRAM_CCR_INIT);
|
|
|
|
mctl_enable_dllx(para->tpr3);
|
|
|
|
/* set refresh period */
|
|
dramc_set_autorefresh_cycle(para->clock, density);
|
|
|
|
/* set timing parameters */
|
|
writel(para->tpr0, &dram->tpr0);
|
|
writel(para->tpr1, &dram->tpr1);
|
|
writel(para->tpr2, &dram->tpr2);
|
|
|
|
reg_val = DRAM_MR_BURST_LENGTH(0x0);
|
|
#if (defined(CONFIG_MACH_SUN5I) || defined(CONFIG_MACH_SUN7I))
|
|
reg_val |= DRAM_MR_POWER_DOWN;
|
|
#endif
|
|
reg_val |= DRAM_MR_CAS_LAT(para->cas - 4);
|
|
reg_val |= DRAM_MR_WRITE_RECOVERY(ddr3_write_recovery(para->clock));
|
|
writel(reg_val, &dram->mr);
|
|
|
|
writel(para->emr1, &dram->emr);
|
|
writel(para->emr2, &dram->emr2);
|
|
writel(para->emr3, &dram->emr3);
|
|
|
|
/* disable drift compensation and set passive DQS window mode */
|
|
clrsetbits_le32(&dram->ccr, DRAM_CCR_DQS_DRIFT_COMP, DRAM_CCR_DQS_GATE);
|
|
|
|
#ifdef CONFIG_MACH_SUN7I
|
|
/* Command rate timing mode 2T & 1T */
|
|
if (para->tpr4 & 0x1)
|
|
setbits_le32(&dram->ccr, DRAM_CCR_COMMAND_RATE_1T);
|
|
#endif
|
|
/* initialize external DRAM */
|
|
mctl_ddr3_initialize();
|
|
|
|
/* scan read pipe value */
|
|
mctl_itm_enable();
|
|
|
|
/* Hardware DQS gate training */
|
|
ret_val = dramc_scan_readpipe();
|
|
|
|
if (ret_val < 0)
|
|
return 0;
|
|
|
|
/* allow to override the DQS training results with a custom delay */
|
|
if (para->dqs_gating_delay)
|
|
mctl_set_dqs_gating_delay(0, para->dqs_gating_delay);
|
|
|
|
/* set the DQS gating window type */
|
|
if (para->active_windowing)
|
|
clrbits_le32(&dram->ccr, DRAM_CCR_DQS_GATE);
|
|
else
|
|
setbits_le32(&dram->ccr, DRAM_CCR_DQS_GATE);
|
|
|
|
mctl_itm_reset();
|
|
|
|
/* configure all host port */
|
|
mctl_configure_hostport();
|
|
|
|
return get_ram_size((long *)PHYS_SDRAM_0, PHYS_SDRAM_0_SIZE);
|
|
}
|
|
|
|
unsigned long dramc_init(struct dram_para *para)
|
|
{
|
|
unsigned long dram_size, actual_density;
|
|
|
|
/* If the dram configuration is not provided, use a default */
|
|
if (!para)
|
|
return 0;
|
|
|
|
/* if everything is known, then autodetection is not necessary */
|
|
if (para->io_width && para->bus_width && para->density)
|
|
return dramc_init_helper(para);
|
|
|
|
/* try to autodetect the DRAM bus width and density */
|
|
para->io_width = 16;
|
|
para->bus_width = 32;
|
|
#if defined(CONFIG_MACH_SUN4I) || defined(CONFIG_MACH_SUN5I)
|
|
/* only A0-A14 address lines on A10/A13, limiting max density to 4096 */
|
|
para->density = 4096;
|
|
#else
|
|
/* all A0-A15 address lines on A20, which allow density 8192 */
|
|
para->density = 8192;
|
|
#endif
|
|
|
|
dram_size = dramc_init_helper(para);
|
|
if (!dram_size) {
|
|
/* if 32-bit bus width failed, try 16-bit bus width instead */
|
|
para->bus_width = 16;
|
|
dram_size = dramc_init_helper(para);
|
|
if (!dram_size) {
|
|
/* if 16-bit bus width also failed, then bail out */
|
|
return dram_size;
|
|
}
|
|
}
|
|
|
|
/* check if we need to adjust the density */
|
|
actual_density = (dram_size >> 17) * para->io_width / para->bus_width;
|
|
|
|
if (actual_density != para->density) {
|
|
/* update the density and re-initialize DRAM again */
|
|
para->density = actual_density;
|
|
dram_size = dramc_init_helper(para);
|
|
}
|
|
|
|
return dram_size;
|
|
}
|