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f86787280b
The NAND sub-layers are likely to need the MTD_OPS_XXX mode information in order to decide if they should enable/disable ECC or how they should place the OOB bytes in the provided OOB buffer. Add a field to nand_page_io_req to pass this information. Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com> Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
734 lines
20 KiB
C
734 lines
20 KiB
C
/* SPDX-License-Identifier: GPL-2.0 */
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/*
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* Copyright 2017 - Free Electrons
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*
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* Authors:
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* Boris Brezillon <boris.brezillon@free-electrons.com>
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* Peter Pan <peterpandong@micron.com>
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*/
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#ifndef __LINUX_MTD_NAND_H
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#define __LINUX_MTD_NAND_H
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#include <linux/mtd/mtd.h>
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/**
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* struct nand_memory_organization - Memory organization structure
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* @bits_per_cell: number of bits per NAND cell
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* @pagesize: page size
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* @oobsize: OOB area size
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* @pages_per_eraseblock: number of pages per eraseblock
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* @eraseblocks_per_lun: number of eraseblocks per LUN (Logical Unit Number)
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* @planes_per_lun: number of planes per LUN
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* @luns_per_target: number of LUN per target (target is a synonym for die)
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* @ntargets: total number of targets exposed by the NAND device
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*/
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struct nand_memory_organization {
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unsigned int bits_per_cell;
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unsigned int pagesize;
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unsigned int oobsize;
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unsigned int pages_per_eraseblock;
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unsigned int eraseblocks_per_lun;
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unsigned int planes_per_lun;
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unsigned int luns_per_target;
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unsigned int ntargets;
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};
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#define NAND_MEMORG(bpc, ps, os, ppe, epl, ppl, lpt, nt) \
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{ \
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.bits_per_cell = (bpc), \
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.pagesize = (ps), \
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.oobsize = (os), \
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.pages_per_eraseblock = (ppe), \
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.eraseblocks_per_lun = (epl), \
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.planes_per_lun = (ppl), \
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.luns_per_target = (lpt), \
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.ntargets = (nt), \
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}
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/**
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* struct nand_row_converter - Information needed to convert an absolute offset
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* into a row address
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* @lun_addr_shift: position of the LUN identifier in the row address
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* @eraseblock_addr_shift: position of the eraseblock identifier in the row
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* address
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*/
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struct nand_row_converter {
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unsigned int lun_addr_shift;
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unsigned int eraseblock_addr_shift;
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};
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/**
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* struct nand_pos - NAND position object
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* @target: the NAND target/die
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* @lun: the LUN identifier
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* @plane: the plane within the LUN
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* @eraseblock: the eraseblock within the LUN
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* @page: the page within the LUN
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*
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* These information are usually used by specific sub-layers to select the
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* appropriate target/die and generate a row address to pass to the device.
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*/
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struct nand_pos {
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unsigned int target;
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unsigned int lun;
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unsigned int plane;
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unsigned int eraseblock;
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unsigned int page;
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};
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/**
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* struct nand_page_io_req - NAND I/O request object
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* @pos: the position this I/O request is targeting
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* @dataoffs: the offset within the page
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* @datalen: number of data bytes to read from/write to this page
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* @databuf: buffer to store data in or get data from
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* @ooboffs: the OOB offset within the page
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* @ooblen: the number of OOB bytes to read from/write to this page
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* @oobbuf: buffer to store OOB data in or get OOB data from
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* @mode: one of the %MTD_OPS_XXX mode
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*
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* This object is used to pass per-page I/O requests to NAND sub-layers. This
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* way all useful information are already formatted in a useful way and
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* specific NAND layers can focus on translating these information into
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* specific commands/operations.
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*/
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struct nand_page_io_req {
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struct nand_pos pos;
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unsigned int dataoffs;
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unsigned int datalen;
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union {
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const void *out;
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void *in;
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} databuf;
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unsigned int ooboffs;
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unsigned int ooblen;
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union {
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const void *out;
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void *in;
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} oobbuf;
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int mode;
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};
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/**
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* struct nand_ecc_req - NAND ECC requirements
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* @strength: ECC strength
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* @step_size: ECC step/block size
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*/
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struct nand_ecc_req {
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unsigned int strength;
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unsigned int step_size;
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};
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#define NAND_ECCREQ(str, stp) { .strength = (str), .step_size = (stp) }
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/**
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* struct nand_bbt - bad block table object
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* @cache: in memory BBT cache
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*/
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struct nand_bbt {
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unsigned long *cache;
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};
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struct nand_device;
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/**
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* struct nand_ops - NAND operations
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* @erase: erase a specific block. No need to check if the block is bad before
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* erasing, this has been taken care of by the generic NAND layer
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* @markbad: mark a specific block bad. No need to check if the block is
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* already marked bad, this has been taken care of by the generic
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* NAND layer. This method should just write the BBM (Bad Block
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* Marker) so that future call to struct_nand_ops->isbad() return
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* true
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* @isbad: check whether a block is bad or not. This method should just read
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* the BBM and return whether the block is bad or not based on what it
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* reads
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*
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* These are all low level operations that should be implemented by specialized
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* NAND layers (SPI NAND, raw NAND, ...).
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*/
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struct nand_ops {
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int (*erase)(struct nand_device *nand, const struct nand_pos *pos);
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int (*markbad)(struct nand_device *nand, const struct nand_pos *pos);
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bool (*isbad)(struct nand_device *nand, const struct nand_pos *pos);
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};
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/**
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* struct nand_device - NAND device
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* @mtd: MTD instance attached to the NAND device
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* @memorg: memory layout
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* @eccreq: ECC requirements
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* @rowconv: position to row address converter
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* @bbt: bad block table info
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* @ops: NAND operations attached to the NAND device
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*
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* Generic NAND object. Specialized NAND layers (raw NAND, SPI NAND, OneNAND)
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* should declare their own NAND object embedding a nand_device struct (that's
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* how inheritance is done).
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* struct_nand_device->memorg and struct_nand_device->eccreq should be filled
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* at device detection time to reflect the NAND device
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* capabilities/requirements. Once this is done nanddev_init() can be called.
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* It will take care of converting NAND information into MTD ones, which means
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* the specialized NAND layers should never manually tweak
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* struct_nand_device->mtd except for the ->_read/write() hooks.
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*/
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struct nand_device {
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struct mtd_info *mtd;
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struct nand_memory_organization memorg;
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struct nand_ecc_req eccreq;
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struct nand_row_converter rowconv;
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struct nand_bbt bbt;
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const struct nand_ops *ops;
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};
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/**
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* struct nand_io_iter - NAND I/O iterator
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* @req: current I/O request
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* @oobbytes_per_page: maximum number of OOB bytes per page
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* @dataleft: remaining number of data bytes to read/write
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* @oobleft: remaining number of OOB bytes to read/write
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*
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* Can be used by specialized NAND layers to iterate over all pages covered
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* by an MTD I/O request, which should greatly simplifies the boiler-plate
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* code needed to read/write data from/to a NAND device.
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*/
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struct nand_io_iter {
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struct nand_page_io_req req;
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unsigned int oobbytes_per_page;
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unsigned int dataleft;
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unsigned int oobleft;
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};
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/**
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* mtd_to_nanddev() - Get the NAND device attached to the MTD instance
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* @mtd: MTD instance
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*
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* Return: the NAND device embedding @mtd.
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*/
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static inline struct nand_device *mtd_to_nanddev(struct mtd_info *mtd)
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{
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return mtd->priv;
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}
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/**
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* nanddev_to_mtd() - Get the MTD device attached to a NAND device
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* @nand: NAND device
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*
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* Return: the MTD device embedded in @nand.
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*/
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static inline struct mtd_info *nanddev_to_mtd(struct nand_device *nand)
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{
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return nand->mtd;
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}
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/*
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* nanddev_bits_per_cell() - Get the number of bits per cell
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* @nand: NAND device
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*
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* Return: the number of bits per cell.
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*/
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static inline unsigned int nanddev_bits_per_cell(const struct nand_device *nand)
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{
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return nand->memorg.bits_per_cell;
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}
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/**
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* nanddev_page_size() - Get NAND page size
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* @nand: NAND device
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*
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* Return: the page size.
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*/
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static inline size_t nanddev_page_size(const struct nand_device *nand)
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{
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return nand->memorg.pagesize;
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}
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/**
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* nanddev_per_page_oobsize() - Get NAND OOB size
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* @nand: NAND device
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*
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* Return: the OOB size.
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*/
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static inline unsigned int
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nanddev_per_page_oobsize(const struct nand_device *nand)
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{
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return nand->memorg.oobsize;
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}
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/**
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* nanddev_pages_per_eraseblock() - Get the number of pages per eraseblock
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* @nand: NAND device
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*
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* Return: the number of pages per eraseblock.
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*/
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static inline unsigned int
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nanddev_pages_per_eraseblock(const struct nand_device *nand)
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{
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return nand->memorg.pages_per_eraseblock;
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}
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/**
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* nanddev_per_page_oobsize() - Get NAND erase block size
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* @nand: NAND device
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*
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* Return: the eraseblock size.
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*/
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static inline size_t nanddev_eraseblock_size(const struct nand_device *nand)
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{
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return nand->memorg.pagesize * nand->memorg.pages_per_eraseblock;
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}
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/**
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* nanddev_eraseblocks_per_lun() - Get the number of eraseblocks per LUN
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* @nand: NAND device
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*
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* Return: the number of eraseblocks per LUN.
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*/
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static inline unsigned int
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nanddev_eraseblocks_per_lun(const struct nand_device *nand)
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{
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return nand->memorg.eraseblocks_per_lun;
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}
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/**
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* nanddev_target_size() - Get the total size provided by a single target/die
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* @nand: NAND device
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*
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* Return: the total size exposed by a single target/die in bytes.
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*/
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static inline u64 nanddev_target_size(const struct nand_device *nand)
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{
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return (u64)nand->memorg.luns_per_target *
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nand->memorg.eraseblocks_per_lun *
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nand->memorg.pages_per_eraseblock *
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nand->memorg.pagesize;
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}
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/**
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* nanddev_ntarget() - Get the total of targets
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* @nand: NAND device
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*
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* Return: the number of targets/dies exposed by @nand.
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*/
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static inline unsigned int nanddev_ntargets(const struct nand_device *nand)
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{
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return nand->memorg.ntargets;
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}
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/**
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* nanddev_neraseblocks() - Get the total number of erasablocks
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* @nand: NAND device
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*
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* Return: the total number of eraseblocks exposed by @nand.
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*/
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static inline unsigned int nanddev_neraseblocks(const struct nand_device *nand)
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{
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return (u64)nand->memorg.luns_per_target *
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nand->memorg.eraseblocks_per_lun *
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nand->memorg.pages_per_eraseblock;
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}
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/**
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* nanddev_size() - Get NAND size
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* @nand: NAND device
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*
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* Return: the total size (in bytes) exposed by @nand.
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*/
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static inline u64 nanddev_size(const struct nand_device *nand)
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{
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return nanddev_target_size(nand) * nanddev_ntargets(nand);
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}
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/**
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* nanddev_get_memorg() - Extract memory organization info from a NAND device
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* @nand: NAND device
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*
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* This can be used by the upper layer to fill the memorg info before calling
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* nanddev_init().
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*
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* Return: the memorg object embedded in the NAND device.
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*/
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static inline struct nand_memory_organization *
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nanddev_get_memorg(struct nand_device *nand)
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{
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return &nand->memorg;
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}
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int nanddev_init(struct nand_device *nand, const struct nand_ops *ops,
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struct module *owner);
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void nanddev_cleanup(struct nand_device *nand);
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/**
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* nanddev_register() - Register a NAND device
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* @nand: NAND device
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*
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* Register a NAND device.
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* This function is just a wrapper around mtd_device_register()
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* registering the MTD device embedded in @nand.
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*
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* Return: 0 in case of success, a negative error code otherwise.
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*/
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static inline int nanddev_register(struct nand_device *nand)
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{
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return mtd_device_register(nand->mtd, NULL, 0);
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}
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/**
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* nanddev_unregister() - Unregister a NAND device
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* @nand: NAND device
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*
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* Unregister a NAND device.
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* This function is just a wrapper around mtd_device_unregister()
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* unregistering the MTD device embedded in @nand.
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*
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* Return: 0 in case of success, a negative error code otherwise.
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*/
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static inline int nanddev_unregister(struct nand_device *nand)
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{
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return mtd_device_unregister(nand->mtd);
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}
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/**
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* nanddev_set_of_node() - Attach a DT node to a NAND device
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* @nand: NAND device
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* @np: DT node
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*
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* Attach a DT node to a NAND device.
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*/
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static inline void nanddev_set_of_node(struct nand_device *nand,
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const struct device_node *np)
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{
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mtd_set_of_node(nand->mtd, np);
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}
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/**
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* nanddev_get_of_node() - Retrieve the DT node attached to a NAND device
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* @nand: NAND device
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*
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* Return: the DT node attached to @nand.
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*/
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static inline const struct device_node *nanddev_get_of_node(struct nand_device *nand)
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{
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return mtd_get_of_node(nand->mtd);
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}
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/**
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* nanddev_offs_to_pos() - Convert an absolute NAND offset into a NAND position
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* @nand: NAND device
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* @offs: absolute NAND offset (usually passed by the MTD layer)
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* @pos: a NAND position object to fill in
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*
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* Converts @offs into a nand_pos representation.
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*
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* Return: the offset within the NAND page pointed by @pos.
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*/
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static inline unsigned int nanddev_offs_to_pos(struct nand_device *nand,
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loff_t offs,
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struct nand_pos *pos)
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{
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unsigned int pageoffs;
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u64 tmp = offs;
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pageoffs = do_div(tmp, nand->memorg.pagesize);
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pos->page = do_div(tmp, nand->memorg.pages_per_eraseblock);
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pos->eraseblock = do_div(tmp, nand->memorg.eraseblocks_per_lun);
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pos->plane = pos->eraseblock % nand->memorg.planes_per_lun;
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pos->lun = do_div(tmp, nand->memorg.luns_per_target);
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pos->target = tmp;
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return pageoffs;
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}
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/**
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* nanddev_pos_cmp() - Compare two NAND positions
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* @a: First NAND position
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* @b: Second NAND position
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*
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* Compares two NAND positions.
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*
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* Return: -1 if @a < @b, 0 if @a == @b and 1 if @a > @b.
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*/
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static inline int nanddev_pos_cmp(const struct nand_pos *a,
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const struct nand_pos *b)
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{
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if (a->target != b->target)
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return a->target < b->target ? -1 : 1;
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if (a->lun != b->lun)
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return a->lun < b->lun ? -1 : 1;
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if (a->eraseblock != b->eraseblock)
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return a->eraseblock < b->eraseblock ? -1 : 1;
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if (a->page != b->page)
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return a->page < b->page ? -1 : 1;
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return 0;
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}
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/**
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* nanddev_pos_to_offs() - Convert a NAND position into an absolute offset
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* @nand: NAND device
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* @pos: the NAND position to convert
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*
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* Converts @pos NAND position into an absolute offset.
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*
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* Return: the absolute offset. Note that @pos points to the beginning of a
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* page, if one wants to point to a specific offset within this page
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* the returned offset has to be adjusted manually.
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*/
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static inline loff_t nanddev_pos_to_offs(struct nand_device *nand,
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const struct nand_pos *pos)
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{
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unsigned int npages;
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npages = pos->page +
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((pos->eraseblock +
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(pos->lun +
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(pos->target * nand->memorg.luns_per_target)) *
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nand->memorg.eraseblocks_per_lun) *
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nand->memorg.pages_per_eraseblock);
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return (loff_t)npages * nand->memorg.pagesize;
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}
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/**
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* nanddev_pos_to_row() - Extract a row address from a NAND position
|
|
* @nand: NAND device
|
|
* @pos: the position to convert
|
|
*
|
|
* Converts a NAND position into a row address that can then be passed to the
|
|
* device.
|
|
*
|
|
* Return: the row address extracted from @pos.
|
|
*/
|
|
static inline unsigned int nanddev_pos_to_row(struct nand_device *nand,
|
|
const struct nand_pos *pos)
|
|
{
|
|
return (pos->lun << nand->rowconv.lun_addr_shift) |
|
|
(pos->eraseblock << nand->rowconv.eraseblock_addr_shift) |
|
|
pos->page;
|
|
}
|
|
|
|
/**
|
|
* nanddev_pos_next_target() - Move a position to the next target/die
|
|
* @nand: NAND device
|
|
* @pos: the position to update
|
|
*
|
|
* Updates @pos to point to the start of the next target/die. Useful when you
|
|
* want to iterate over all targets/dies of a NAND device.
|
|
*/
|
|
static inline void nanddev_pos_next_target(struct nand_device *nand,
|
|
struct nand_pos *pos)
|
|
{
|
|
pos->page = 0;
|
|
pos->plane = 0;
|
|
pos->eraseblock = 0;
|
|
pos->lun = 0;
|
|
pos->target++;
|
|
}
|
|
|
|
/**
|
|
* nanddev_pos_next_lun() - Move a position to the next LUN
|
|
* @nand: NAND device
|
|
* @pos: the position to update
|
|
*
|
|
* Updates @pos to point to the start of the next LUN. Useful when you want to
|
|
* iterate over all LUNs of a NAND device.
|
|
*/
|
|
static inline void nanddev_pos_next_lun(struct nand_device *nand,
|
|
struct nand_pos *pos)
|
|
{
|
|
if (pos->lun >= nand->memorg.luns_per_target - 1)
|
|
return nanddev_pos_next_target(nand, pos);
|
|
|
|
pos->lun++;
|
|
pos->page = 0;
|
|
pos->plane = 0;
|
|
pos->eraseblock = 0;
|
|
}
|
|
|
|
/**
|
|
* nanddev_pos_next_eraseblock() - Move a position to the next eraseblock
|
|
* @nand: NAND device
|
|
* @pos: the position to update
|
|
*
|
|
* Updates @pos to point to the start of the next eraseblock. Useful when you
|
|
* want to iterate over all eraseblocks of a NAND device.
|
|
*/
|
|
static inline void nanddev_pos_next_eraseblock(struct nand_device *nand,
|
|
struct nand_pos *pos)
|
|
{
|
|
if (pos->eraseblock >= nand->memorg.eraseblocks_per_lun - 1)
|
|
return nanddev_pos_next_lun(nand, pos);
|
|
|
|
pos->eraseblock++;
|
|
pos->page = 0;
|
|
pos->plane = pos->eraseblock % nand->memorg.planes_per_lun;
|
|
}
|
|
|
|
/**
|
|
* nanddev_pos_next_eraseblock() - Move a position to the next page
|
|
* @nand: NAND device
|
|
* @pos: the position to update
|
|
*
|
|
* Updates @pos to point to the start of the next page. Useful when you want to
|
|
* iterate over all pages of a NAND device.
|
|
*/
|
|
static inline void nanddev_pos_next_page(struct nand_device *nand,
|
|
struct nand_pos *pos)
|
|
{
|
|
if (pos->page >= nand->memorg.pages_per_eraseblock - 1)
|
|
return nanddev_pos_next_eraseblock(nand, pos);
|
|
|
|
pos->page++;
|
|
}
|
|
|
|
/**
|
|
* nand_io_iter_init - Initialize a NAND I/O iterator
|
|
* @nand: NAND device
|
|
* @offs: absolute offset
|
|
* @req: MTD request
|
|
* @iter: NAND I/O iterator
|
|
*
|
|
* Initializes a NAND iterator based on the information passed by the MTD
|
|
* layer.
|
|
*/
|
|
static inline void nanddev_io_iter_init(struct nand_device *nand,
|
|
loff_t offs, struct mtd_oob_ops *req,
|
|
struct nand_io_iter *iter)
|
|
{
|
|
struct mtd_info *mtd = nanddev_to_mtd(nand);
|
|
|
|
iter->req.mode = req->mode;
|
|
iter->req.dataoffs = nanddev_offs_to_pos(nand, offs, &iter->req.pos);
|
|
iter->req.ooboffs = req->ooboffs;
|
|
iter->oobbytes_per_page = mtd_oobavail(mtd, req);
|
|
iter->dataleft = req->len;
|
|
iter->oobleft = req->ooblen;
|
|
iter->req.databuf.in = req->datbuf;
|
|
iter->req.datalen = min_t(unsigned int,
|
|
nand->memorg.pagesize - iter->req.dataoffs,
|
|
iter->dataleft);
|
|
iter->req.oobbuf.in = req->oobbuf;
|
|
iter->req.ooblen = min_t(unsigned int,
|
|
iter->oobbytes_per_page - iter->req.ooboffs,
|
|
iter->oobleft);
|
|
}
|
|
|
|
/**
|
|
* nand_io_iter_next_page - Move to the next page
|
|
* @nand: NAND device
|
|
* @iter: NAND I/O iterator
|
|
*
|
|
* Updates the @iter to point to the next page.
|
|
*/
|
|
static inline void nanddev_io_iter_next_page(struct nand_device *nand,
|
|
struct nand_io_iter *iter)
|
|
{
|
|
nanddev_pos_next_page(nand, &iter->req.pos);
|
|
iter->dataleft -= iter->req.datalen;
|
|
iter->req.databuf.in += iter->req.datalen;
|
|
iter->oobleft -= iter->req.ooblen;
|
|
iter->req.oobbuf.in += iter->req.ooblen;
|
|
iter->req.dataoffs = 0;
|
|
iter->req.ooboffs = 0;
|
|
iter->req.datalen = min_t(unsigned int, nand->memorg.pagesize,
|
|
iter->dataleft);
|
|
iter->req.ooblen = min_t(unsigned int, iter->oobbytes_per_page,
|
|
iter->oobleft);
|
|
}
|
|
|
|
/**
|
|
* nand_io_iter_end - Should end iteration or not
|
|
* @nand: NAND device
|
|
* @iter: NAND I/O iterator
|
|
*
|
|
* Check whether @iter has reached the end of the NAND portion it was asked to
|
|
* iterate on or not.
|
|
*
|
|
* Return: true if @iter has reached the end of the iteration request, false
|
|
* otherwise.
|
|
*/
|
|
static inline bool nanddev_io_iter_end(struct nand_device *nand,
|
|
const struct nand_io_iter *iter)
|
|
{
|
|
if (iter->dataleft || iter->oobleft)
|
|
return false;
|
|
|
|
return true;
|
|
}
|
|
|
|
/**
|
|
* nand_io_for_each_page - Iterate over all NAND pages contained in an MTD I/O
|
|
* request
|
|
* @nand: NAND device
|
|
* @start: start address to read/write from
|
|
* @req: MTD I/O request
|
|
* @iter: NAND I/O iterator
|
|
*
|
|
* Should be used for iterate over pages that are contained in an MTD request.
|
|
*/
|
|
#define nanddev_io_for_each_page(nand, start, req, iter) \
|
|
for (nanddev_io_iter_init(nand, start, req, iter); \
|
|
!nanddev_io_iter_end(nand, iter); \
|
|
nanddev_io_iter_next_page(nand, iter))
|
|
|
|
bool nanddev_isbad(struct nand_device *nand, const struct nand_pos *pos);
|
|
bool nanddev_isreserved(struct nand_device *nand, const struct nand_pos *pos);
|
|
int nanddev_erase(struct nand_device *nand, const struct nand_pos *pos);
|
|
int nanddev_markbad(struct nand_device *nand, const struct nand_pos *pos);
|
|
|
|
/* BBT related functions */
|
|
enum nand_bbt_block_status {
|
|
NAND_BBT_BLOCK_STATUS_UNKNOWN,
|
|
NAND_BBT_BLOCK_GOOD,
|
|
NAND_BBT_BLOCK_WORN,
|
|
NAND_BBT_BLOCK_RESERVED,
|
|
NAND_BBT_BLOCK_FACTORY_BAD,
|
|
NAND_BBT_BLOCK_NUM_STATUS,
|
|
};
|
|
|
|
int nanddev_bbt_init(struct nand_device *nand);
|
|
void nanddev_bbt_cleanup(struct nand_device *nand);
|
|
int nanddev_bbt_update(struct nand_device *nand);
|
|
int nanddev_bbt_get_block_status(const struct nand_device *nand,
|
|
unsigned int entry);
|
|
int nanddev_bbt_set_block_status(struct nand_device *nand, unsigned int entry,
|
|
enum nand_bbt_block_status status);
|
|
int nanddev_bbt_markbad(struct nand_device *nand, unsigned int block);
|
|
|
|
/**
|
|
* nanddev_bbt_pos_to_entry() - Convert a NAND position into a BBT entry
|
|
* @nand: NAND device
|
|
* @pos: the NAND position we want to get BBT entry for
|
|
*
|
|
* Return the BBT entry used to store information about the eraseblock pointed
|
|
* by @pos.
|
|
*
|
|
* Return: the BBT entry storing information about eraseblock pointed by @pos.
|
|
*/
|
|
static inline unsigned int nanddev_bbt_pos_to_entry(struct nand_device *nand,
|
|
const struct nand_pos *pos)
|
|
{
|
|
return pos->eraseblock +
|
|
((pos->lun + (pos->target * nand->memorg.luns_per_target)) *
|
|
nand->memorg.eraseblocks_per_lun);
|
|
}
|
|
|
|
/**
|
|
* nanddev_bbt_is_initialized() - Check if the BBT has been initialized
|
|
* @nand: NAND device
|
|
*
|
|
* Return: true if the BBT has been initialized, false otherwise.
|
|
*/
|
|
static inline bool nanddev_bbt_is_initialized(struct nand_device *nand)
|
|
{
|
|
return !!nand->bbt.cache;
|
|
}
|
|
|
|
/* MTD -> NAND helper functions. */
|
|
int nanddev_mtd_erase(struct mtd_info *mtd, struct erase_info *einfo);
|
|
|
|
#endif /* __LINUX_MTD_NAND_H */
|