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f2ff834365
To i.MX6, DDR3 and LPDDR2 is supported, so rename function mx6_dram_cfg to mx6_ddr3_cfg and the original mx6_dram_cfg function only is a wrapper. The new reimplemented function mx6_dram_cfg only invokes mx6_ddr3_cfg when ddr_type is for DDR3. Later we can use ddr_type to initialize MMDC for LPDDR2. Initialize ddr_type for different boards which enable SPL. Signed-off-by: Peng Fan <Peng.Fan@freescale.com> Cc: Stefano Babic <sbabic@denx.de> Cc: Tim Harvey <tharvey@gateworks.com> Cc: Stefan Roese <sr@denx.de> Cc: Fabio Estevam <fabio.estevam@freescale.com> Reviewed-by: Stefan Roese <sr@denx.de>
186 lines
4.8 KiB
C
186 lines
4.8 KiB
C
/*
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* Copyright (C) 2014 Stefan Roese <sr@denx.de>
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*
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* Based on: gw_ventana_spl.c which is:
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* Copyright (C) 2014 Gateworks Corporation
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*
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* SPDX-License-Identifier: GPL-2.0+
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*/
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#include <common.h>
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#include <i2c.h>
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#include <asm/io.h>
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#include <asm/arch/iomux.h>
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#include <asm/arch/mx6-ddr.h>
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#include <asm/arch/mx6-pins.h>
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#include <asm/arch/sys_proto.h>
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#include <asm/imx-common/boot_mode.h>
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#include <asm/imx-common/iomux-v3.h>
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#include <asm/imx-common/mxc_i2c.h>
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#include <spl.h>
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#include "platinum.h"
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DECLARE_GLOBAL_DATA_PTR;
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#undef RTT_NOM_120OHM /* use 120ohm Rtt_nom vs 60ohm (lower power) */
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/* Configure MX6Q/DUAL mmdc DDR io registers */
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struct mx6dq_iomux_ddr_regs mx6dq_ddr_ioregs = {
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/* SDCLK[0:1], CAS, RAS, Reset: Differential input, 40ohm */
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.dram_sdclk_0 = 0x00020030,
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.dram_sdclk_1 = 0x00020030,
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.dram_cas = 0x00020030,
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.dram_ras = 0x00020030,
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.dram_reset = 0x00020030,
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/* SDCKE[0:1]: 100k pull-up */
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.dram_sdcke0 = 0x00003000,
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.dram_sdcke1 = 0x00003000,
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/* SDBA2: pull-up disabled */
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.dram_sdba2 = 0x00000000,
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/* SDODT[0:1]: 100k pull-up, 40 ohm */
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.dram_sdodt0 = 0x00003030,
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.dram_sdodt1 = 0x00003030,
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/* SDQS[0:7]: Differential input, 40 ohm */
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.dram_sdqs0 = 0x00000030,
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.dram_sdqs1 = 0x00000030,
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.dram_sdqs2 = 0x00000030,
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.dram_sdqs3 = 0x00000030,
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.dram_sdqs4 = 0x00000030,
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.dram_sdqs5 = 0x00000030,
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.dram_sdqs6 = 0x00000030,
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.dram_sdqs7 = 0x00000030,
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/* DQM[0:7]: Differential input, 40 ohm */
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.dram_dqm0 = 0x00020030,
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.dram_dqm1 = 0x00020030,
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.dram_dqm2 = 0x00020030,
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.dram_dqm3 = 0x00020030,
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.dram_dqm4 = 0x00020030,
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.dram_dqm5 = 0x00020030,
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.dram_dqm6 = 0x00020030,
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.dram_dqm7 = 0x00020030,
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};
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/* Configure MX6Q/DUAL mmdc GRP io registers */
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struct mx6dq_iomux_grp_regs mx6dq_grp_ioregs = {
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/* DDR3 */
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.grp_ddr_type = 0x000c0000,
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.grp_ddrmode_ctl = 0x00020000,
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/* disable DDR pullups */
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.grp_ddrpke = 0x00000000,
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/* ADDR[00:16], SDBA[0:1]: 40 ohm */
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.grp_addds = 0x00000030,
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/* CS0/CS1/SDBA2/CKE0/CKE1/SDWE: 40 ohm */
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.grp_ctlds = 0x00000030,
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/* DATA[00:63]: Differential input, 40 ohm */
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.grp_ddrmode = 0x00020000,
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.grp_b0ds = 0x00000030,
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.grp_b1ds = 0x00000030,
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.grp_b2ds = 0x00000030,
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.grp_b3ds = 0x00000030,
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.grp_b4ds = 0x00000030,
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.grp_b5ds = 0x00000030,
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.grp_b6ds = 0x00000030,
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.grp_b7ds = 0x00000030,
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};
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/* MT41J128M16JT-125 */
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static struct mx6_ddr3_cfg mt41j128m16jt_125 = {
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.mem_speed = 1600,
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.density = 2,
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.width = 16,
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.banks = 8,
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.rowaddr = 14,
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.coladdr = 10,
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.pagesz = 2,
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.trcd = 1375,
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.trcmin = 4875,
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.trasmin = 3500,
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};
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static struct mx6_mmdc_calibration mx6dq_mmdc_calib = {
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/* Write leveling calibration determine */
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.p0_mpwldectrl0 = 0x001f001f,
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.p0_mpwldectrl1 = 0x001f001f,
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.p1_mpwldectrl0 = 0x00440044,
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.p1_mpwldectrl1 = 0x00440044,
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/* Read DQS Gating calibration */
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.p0_mpdgctrl0 = 0x434b0350,
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.p0_mpdgctrl1 = 0x034c0359,
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.p1_mpdgctrl0 = 0x434b0350,
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.p1_mpdgctrl1 = 0x03650348,
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/* Read Calibration: DQS delay relative to DQ read access */
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.p0_mprddlctl = 0x4436383b,
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.p1_mprddlctl = 0x39393341,
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/* Write Calibration: DQ/DM delay relative to DQS write access */
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.p0_mpwrdlctl = 0x35373933,
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.p1_mpwrdlctl = 0x48254a36,
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};
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static void spl_dram_init(int width)
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{
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struct mx6_ddr3_cfg *mem = &mt41j128m16jt_125;
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struct mx6_ddr_sysinfo sysinfo = {
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/* width of data bus:0=16,1=32,2=64 */
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.dsize = width / 32,
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/* config for full 4GB range so that get_mem_size() works */
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.cs_density = 32, /* 32Gb per CS */
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/* single chip select */
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.ncs = 1,
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.cs1_mirror = 1,
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.rtt_wr = 1 /*DDR3_RTT_60_OHM*/, /* RTT_Wr = RZQ/4 */
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#ifdef RTT_NOM_120OHM
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.rtt_nom = 2 /*DDR3_RTT_120_OHM*/, /* RTT_Nom = RZQ/2 */
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#else
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.rtt_nom = 1 /*DDR3_RTT_60_OHM*/, /* RTT_Nom = RZQ/4 */
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#endif
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.walat = 0, /* Write additional latency */
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.ralat = 5, /* Read additional latency */
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.mif3_mode = 3, /* Command prediction working mode */
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.bi_on = 1, /* Bank interleaving enabled */
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.sde_to_rst = 0x10, /* 14 cycles, 200us (JEDEC default) */
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.rst_to_cke = 0x23, /* 33 cycles, 500us (JEDEC default) */
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.ddr_type = DDR_TYPE_DDR3,
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};
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mx6dq_dram_iocfg(width, &mx6dq_ddr_ioregs, &mx6dq_grp_ioregs);
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mx6_dram_cfg(&sysinfo, &mx6dq_mmdc_calib, mem);
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}
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/*
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* Called from C runtime startup code (arch/arm/lib/crt0.S:_main)
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* - we have a stack and a place to store GD, both in SRAM
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* - no variable global data is available
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*/
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void board_init_f(ulong dummy)
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{
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/* Setup AIPS and disable watchdog */
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arch_cpu_init();
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ccgr_init();
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gpr_init();
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/* UART iomux */
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board_early_init_f();
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/* Setup GP timer */
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timer_init();
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/* UART clocks enabled and gd valid - init serial console */
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preloader_console_init();
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/* Init DDR with 32bit width */
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spl_dram_init(32);
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/* Clear the BSS */
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memset(__bss_start, 0, __bss_end - __bss_start);
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/*
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* Setup enet related MUXing early to give the PHY
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* some time to wake-up from reset
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*/
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platinum_setup_enet();
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/* load/boot image from boot device */
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board_init_r(NULL, 0);
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}
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