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ARM: dts: stm32mp1: DDR config v1.44
Update DDR configuration with the latest update: - PUBL_regs: DXnGCR[0]= according to ddr_width to disable Byte lane 2/3 in 16bit - fix LPDDR2/3 timing_calc to step RL/WL in relaxed timings mode - remove LPDDR3 RL3 (optional) support vs MR0[7] because MR0[7] can't be read instead always apply worse RL/WL for LPDDR3 when freq < 166MHz) - change MR3 to 48ohm drive for LPDDR2/3 - change default ZPROG[7:4] = 0x1 for LPDDR2/3 , '0' is not allowed even when ODT not used - use DQSTRN for LPDDR2/3 (it was not set in PIR) - LPDDR3: set dqsge/dwsgx gate extension to 2,2 like LPDDR2 -DDRCTRL.dfitmg0: + for LPDDR3 tphy_wrlat = WL (as LPDDR2) + improvement for relaxed mode vs RL/Wl at corner case. For example @533MHz RL/WL (relaxed) = 9/5 for LPDDR2/3 and correction to MR2 accordingly - DDR_PCFGQOS1_1: port1 timeout relaxed from 0x00 to 0x40, for LTDC. - DDR_PCFGWQOS0_0: change vpr level from 11 to 12 in order to include the CPU on the variable priority queue. - DDR_SCHED: fix to consider 13 levels (13 levels - 1 = 0xC) Signed-off-by: Patrick Delaunay <patrick.delaunay@st.com>
This commit is contained in:
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2 changed files with 14 additions and 14 deletions
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@ -16,7 +16,7 @@
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* address mapping : RBC
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* Tc > + 85C : N
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*/
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#define DDR_MEM_NAME "DDR3-1066/888 bin G 1x4Gb 533MHz v1.43"
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#define DDR_MEM_NAME "DDR3-1066/888 bin G 1x4Gb 533MHz v1.44"
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#define DDR_MEM_SPEED 533000
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#define DDR_MEM_SIZE 0x20000000
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@ -108,11 +108,11 @@
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#define DDR_DX1DLLCR 0x40000000
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#define DDR_DX1DQTR 0xFFFFFFFF
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#define DDR_DX1DQSTR 0x3DB02000
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#define DDR_DX2GCR 0x0000CE81
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#define DDR_DX2GCR 0x0000CE80
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#define DDR_DX2DLLCR 0x40000000
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#define DDR_DX2DQTR 0xFFFFFFFF
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#define DDR_DX2DQSTR 0x3DB02000
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#define DDR_DX3GCR 0x0000CE81
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#define DDR_DX3GCR 0x0000CE80
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#define DDR_DX3DLLCR 0x40000000
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#define DDR_DX3DQTR 0xFFFFFFFF
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#define DDR_DX3DQSTR 0x3DB02000
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@ -1,9 +1,8 @@
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// SPDX-License-Identifier: GPL-2.0+ OR BSD-3-Clause
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/*
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* Copyright (C) 2018, STMicroelectronics - All Rights Reserved
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*/
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/* STM32MP157C ED1 and ED2 BOARD configuration
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*
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* STM32MP157C ED1 BOARD configuration
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* 2x DDR3L 4Gb each, 16-bit, 533MHz, Single Die Package in flyby topology.
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* Reference used NT5CC256M16DP-DI from NANYA
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*
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@ -15,9 +14,10 @@
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* timing mode optimized
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* Scheduling/QoS options : type = 2
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* address mapping : RBC
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* Tc > + 85C : N
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*/
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#define DDR_MEM_NAME "DDR3-1066 bin G 2x4Gb 533MHz v1.36"
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#define DDR_MEM_NAME "DDR3-1066/888 bin G 2x4Gb 533MHz v1.44"
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#define DDR_MEM_SPEED 533000
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#define DDR_MEM_SIZE 0x40000000
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@ -62,7 +62,7 @@
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#define DDR_ADDRMAP11 0x00000000
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#define DDR_ODTCFG 0x06000600
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#define DDR_ODTMAP 0x00000001
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#define DDR_SCHED 0x00001201
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#define DDR_SCHED 0x00000C01
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#define DDR_SCHED1 0x00000000
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#define DDR_PERFHPR1 0x01000001
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#define DDR_PERFLPR1 0x08000200
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@ -74,15 +74,15 @@
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#define DDR_PCCFG 0x00000010
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#define DDR_PCFGR_0 0x00010000
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#define DDR_PCFGW_0 0x00000000
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#define DDR_PCFGQOS0_0 0x02100B03
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#define DDR_PCFGQOS0_0 0x02100C03
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#define DDR_PCFGQOS1_0 0x00800100
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#define DDR_PCFGWQOS0_0 0x01100B03
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#define DDR_PCFGWQOS0_0 0x01100C03
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#define DDR_PCFGWQOS1_0 0x01000200
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#define DDR_PCFGR_1 0x00010000
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#define DDR_PCFGW_1 0x00000000
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#define DDR_PCFGQOS0_1 0x02100B03
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#define DDR_PCFGQOS1_1 0x00800100
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#define DDR_PCFGWQOS0_1 0x01100B03
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#define DDR_PCFGQOS0_1 0x02100C03
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#define DDR_PCFGQOS1_1 0x00800040
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#define DDR_PCFGWQOS0_1 0x01100C03
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#define DDR_PCFGWQOS1_1 0x01000200
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#define DDR_PGCR 0x01442E02
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#define DDR_PTR0 0x0022AA5B
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@ -100,7 +100,7 @@
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#define DDR_MR2 0x00000208
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#define DDR_MR3 0x00000000
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#define DDR_ODTCR 0x00010000
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#define DDR_ZQ0CR1 0x0000005B
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#define DDR_ZQ0CR1 0x00000038
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#define DDR_DX0GCR 0x0000CE81
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#define DDR_DX0DLLCR 0x40000000
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#define DDR_DX0DQTR 0xFFFFFFFF
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